Ferroelectric TiN/Hf₀.₅Zr₀.₅O₂/Tin Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications

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dc.contributor.ORCID0000-0003-0690-7423 (Young, CD)
dc.contributor.ORCID0000-0003-2781-5149 (Kim, J)
dc.contributor.VIAF70133685 (Kim, J)
dc.contributor.authorKim, Si Joon
dc.contributor.authorMohan, Jaidah
dc.contributor.authorYoung, Chadwin D.
dc.contributor.authorColombo, Luigi
dc.contributor.authorKim, Jiyoung
dc.contributor.authorSummerfelt, S. R.
dc.contributor.authorSan, T.
dc.contributor.utdAuthorKim, Si Joon
dc.contributor.utdAuthorMohan, Jaidah
dc.contributor.utdAuthorYoung, Chadwin D.
dc.contributor.utdAuthorColombo, Luigi
dc.contributor.utdAuthorKim, Jiyoung
dc.date.accessioned2019-07-25T22:32:37Z
dc.date.available2019-07-25T22:32:37Z
dc.date.created2018-05
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article). All others may find the web address for this item in the full item record as "dc.relation.uri" metadata.
dc.description.abstractIn this study, we investigated the ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO) thin films with different thicknesses (5-20 nm) deposited by atomic layer deposition for the development of future ferroelectric random access memory cells. HZO-based capacitors with a thickness of 5 nm exhibited a switching polarization of ~13 μC/cm² and a ferroelectric saturation voltage of 1.0 V as extracted from the pulse write/read measurements. Furthermore, we performed fatigue measurements and we found no degradation up to 10¹⁰ switching cycles at 1.2 V.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationKim, S. J., J. Mohan, C. D. Young, L. Colombo, et al. 2018. "Ferroelectric TiN/Hf₀.₅Zr₀.₅O₂/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications." International Memory Workshop,10th, doi:10.1109/IMW.2018.8388832
dc.identifier.issn9781538652473 (ISBN)
dc.identifier.urihttps://hdl.handle.net/10735.1/6723
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isPartOfInternational Memory Workshop, 10th
dc.relation.urihttp://dx.doi.org/10.1109/IMW.2018.8388832
dc.rights©2018 IEEE
dc.subjectAtomic layer deposition
dc.subjectRandom access memory--Ferroelectric
dc.subjectFerroelectric thin films
dc.subjectFerroelectricity
dc.subjectHafnium compounds
dc.subjectThin films
dc.subjectTin
dc.subjectZirconium compounds
dc.subjectMaterials—Fatigue
dc.titleFerroelectric TiN/Hf₀.₅Zr₀.₅O₂/Tin Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
dc.type.genrearticle

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Kim, Jiyoung
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