Silicon Etch Using SF₆/C₄F₈/Ar Gas Mixtures

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dc.contributor.ISNI0000 0000 5396 3610 (Goeckner, MJ)
dc.contributor.ISNI0000 0003 5379 4329 (Overzet, LJ)
dc.contributor.ISNI0000 0001 2766 4681 (Thamban, PLS)
dc.contributor.LCNA2008008261‏ (Goeckner, MJ)
dc.contributor.authorBates, Robert L.en_US
dc.contributor.authorThamban, P. L. Stephanen_US
dc.contributor.authorGoeckner, Matthew J.en_US
dc.contributor.authorOverzet, Lawrence J.en_US
dc.date.accessioned2014-10-23T20:08:23Z
dc.date.available2014-10-23T20:08:23Z
dc.date.created2014-03-30
dc.description.abstractWhile plasmas using mixtures of SF₆, C₄F₈, and Ar are widely used in deep silicon etching, very few studies have linked the discharge parameters to etching results. The authors form such linkages in this report. The authors measured the optical emission intensities of lines from Ar, F, S, SFx, CF₂, C₂, C₃, and CS as a function of the percentage C₄F₈ in the gas flow, the total gas flow rate, and the bias power. In addition, the ion current density and electron temperature were measured using a floating Langmuir probe. For comparison, trenches were etched of various widths and the trench profiles (etch depth, undercut) were measured. The addition of C₄F₈ to an SF₆/Ar plasma acts to reduce the availability of F as well as increase the deposition of passivation film. Sulfur combines with carbon in the plasma efficiently to create a large optical emission of CS and suppress optical emissions from C₂ and C₃. At low fractional flows of C₄F₈, the etch process appears to be controlled by the ion flux more so than by the F density. At large C₄F₈ fractional flows, the etch process appears to be controlled more by the F density than by the ion flux or deposition rate of passivation film. CF₂ and C₂ do not appear to cause deposition from the plasma, but CS and other carbon containing molecules as well as ions do.en_US
dc.description.sponsorship"This material is based upon work supported in part by SRC under award number: 2012-VJ-2261. "en_US
dc.identifier.citationBates, Robert L., P. L. Stephan Thamban, Matthew J. Goeckner, and Lawrence J. Overzet. 2014. "Silicon etch using SF₆/C₄F₈/Ar gas mixtures." Journal of Vacuum Science & Technology A 32(4): 041302-1 to 11.en_US
dc.identifier.issn0734-2101en_US
dc.identifier.issn1520-8559en_US
dc.identifier.issue4en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4137
dc.identifier.volume32en_US
dc.relation.urihttp://dx.doi.org/10.1116/1.4880800en_US
dc.rights©2014 American Vacuum Societyen_US
dc.source.journalJournal of Vacuum Science & Technology Aen_US
dc.subjectPlasmaen_US
dc.subjectArgonen_US
dc.subjectSulfur Hexafluorideen_US
dc.subjectOctafluorocyclobutaneen_US
dc.subjectSilicon--Etchingen_US
dc.subjectPlasma etchingen_US
dc.titleSilicon Etch Using SF₆/C₄F₈/Ar Gas Mixturesen_US
dc.type.genrearticleen_US

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Overzet, Lawrence J.
Goeckner, Matthew J.
Thamban, P. L. Stephan