Electrical Design of InAs-Sb/GaSb Superlattices for Optical Detectors using Full Bandstructure Sp³s* Tight-Binding Method and Bloch Boundary Conditions

dc.contributor.ISNI0000 0000 3595 8922 (Frensley, WR)
dc.contributor.LCNA93078927 (Frensley)
dc.contributor.authorMir, Raja N.en_US
dc.contributor.authorFrensley, William R.en_US
dc.date.accessioned2014-08-14T21:32:06Z
dc.date.available2014-08-14T21:32:06Z
dc.date.created2013-10-17
dc.description.abstractInAs-Sb/GaSb type-II strain compensated superlattices (SLS) are currently being used in mid-wave and long-wave infrared photodetectors. The electronic bandstructure of InSb and GaSb shows very strong anisotropy and non-parabolicity close to the Γ-point for the conduction band (CB) minimum and the valence band (VB) maximum. Particularly around the energy range of 45-80 meV from band-edge we observe strong non-parabolicity in the CB and light hole VB. The band-edge dispersion determines the electrical properties of a material. When the bulk materials are combined to form a superlattice we need a model of bandstructure which takes into account the full bandstructure details of the constituents and also the strong interaction between the conduction band of InAs and valence bands of GaSb. There can also be contact potentials near the interface between two dissimilar superlattices which will not be captured unless a full bandstructure calculation is done. In this study, we have done a calculation using second nearest neighbor tight binding model in order to accurately reproduce the effective masses. The calculation of mini-band structure is done by finding the wavefunctions within one SL period subject to Bloch boundary conditions ψ(L) = ψ(0) e(ikL). We demonstrate in this paper how a calculation of carrier concentration as a function of the position of the Fermi level (EF) within bandgap(Eg) should be done in order to take into account the full bandstructure of broken-bandgap material systems. This calculation is key for determining electron transport particularly when we have an interface between two dissimilar superlattices.en_US
dc.identifier.bibliographicCitationMir, R. N., and W. R. Frensley. 2013. "Electrical design of InAs-Sb/GaSb superlattices for optical detectors using full bandstructure sp3s* tight-binding method and Bloch boundary conditions." Journal of Applied Physics 114(153706): 1-6.
dc.identifier.citationMir, R. N., and W. R. Frensley. 2013. "Electrical design of InAs-Sb/GaSb superlattices for optical detectors using full bandstructure sp3s* tight-binding method and Bloch boundary conditions." Journal of Applied Physics 114(153706): 1-6.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue153706en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/3881
dc.identifier.volume114en_US
dc.language.isoenen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4824365en_US
dc.rights©2013 AIP Publishing LLCen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectBandstructureen_US
dc.subjectGaSben_US
dc.subjectInSben_US
dc.subjectSuperlatticesen_US
dc.subjectTight-binding methoden_US
dc.titleElectrical Design of InAs-Sb/GaSb Superlattices for Optical Detectors using Full Bandstructure Sp³s* Tight-Binding Method and Bloch Boundary Conditionsen_US
dc.type.genrearticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
ECS-FR-WRFrensley-309618.24.pdf
Size:
934.66 KB
Format:
Adobe Portable Document Format
Description:
Article

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
American Institute of Physics.pdf
Size:
245.03 KB
Format:
Adobe Portable Document Format
Description: