Quantum Parity Hall Effect in Bernal-Stacked Trilayer Graphene

dc.contributor.ORCID0000-0003-4623-4200 (Zhang, F)
dc.contributor.authorStepanov, P.
dc.contributor.authorBarlas, Y.
dc.contributor.authorChe, S.
dc.contributor.authorMyhro, K.
dc.contributor.authorVoigt, G.
dc.contributor.authorPi, Z.
dc.contributor.authorWatanabe, K.
dc.contributor.authorTaniguchi, T.
dc.contributor.authorSmirnov, D.
dc.contributor.authorZhang, Fan
dc.contributor.authorLake, R. K.
dc.contributor.authorMacDonald, A. H.
dc.contributor.authorLau, C. N.
dc.contributor.utdAuthorZhang, Fan
dc.date.accessioned2020-07-17T19:47:47Z
dc.date.available2020-07-17T19:47:47Z
dc.date.issued2019-05-03
dc.descriptionIncludes supplementary material
dc.description.abstractThe quantum Hall effect has recently been generalized from transport of conserved charges to include transport of other approximately conserved-state variables, including spin and valley, via spin- or valley-polarized boundary states with different chiralities. Here, we report a class of quantum Hall effect in Bernal- or ABA-stacked trilayer graphene (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the system's mirror reflection symmetry. At the charge neutrality point, the longitudinal conductance σₓₓ is first quantized to 4e²=h at a small perpendicular magnetic field B⊥, establishing the presence of four edge channels. As B⊥ increases, σₓₓ first decreases to 2e²=h, indicating spin-polarized counterpropagating edge states, and then, to approximately zero. These behaviors arise from level crossings between even- and odd-parity bulk Landau levels driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong B⊥ limit and a spin-polarized state at intermediate fields. The transitions between spin-polarized and -unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions. ©2019 The Authors. All rights reserved.
dc.description.departmentSchool of Natural Sciences and Mathematics
dc.identifier.bibliographicCitationStepanov, P., Y. Barlas, S. Che, K. Myhro, et al. 2019. "Quantum parity Hall effect in Bernal-stacked trilayer graphene." Proceedings of the National Academy of Sciences of the United States of America 116(21): 10286-10290, doi: 10.1073/pnas.1820835116
dc.identifier.issn0027-8424
dc.identifier.issue21
dc.identifier.urihttp://dx.doi.org/10.1073/pnas.1820835116
dc.identifier.urihttps://hdl.handle.net/10735.1/8716
dc.identifier.volume116
dc.language.isoen
dc.publisherNational Academy of Sciences
dc.rights©2019 The Authors. All rights reserved.
dc.source.journalProceedings of the National Academy of Sciences of the United States of America
dc.subject2D Materials
dc.subjectQuantum Hall effect
dc.subjectTopological insulators
dc.subjectGraphene, Trilayer
dc.titleQuantum Parity Hall Effect in Bernal-Stacked Trilayer Graphene
dc.type.genrearticle

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