Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)

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dc.contributor.ISNI0000 0003 8600 0978 (Hsu, JWP)en_US
dc.contributor.ORCID0000-0003-2698-7774 (Cho, K)en_US
dc.contributor.ORCID0000-0003-2781-5149 (Kim, J)en_US
dc.contributor.authorHuang, Jieen_US
dc.contributor.authorZhang, Hengjien_US
dc.contributor.authorLucero, Antonioen_US
dc.contributor.authorCheng, Lanxiaen_US
dc.contributor.authorKC, Santoshen_US
dc.contributor.authorWang, Jianen_US
dc.contributor.authorHsu, Julia W. P.en_US
dc.contributor.authorCho, Kyeongjaeen_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.utdAuthorHuang, Jie
dc.contributor.utdAuthorZhang, Hengji
dc.contributor.utdAuthorLucero, Antonio
dc.contributor.utdAuthorCheng, Lanxia
dc.contributor.utdAuthorKC, Santosh
dc.contributor.utdAuthorWang, Jian
dc.contributor.utdAuthorHsu, Julia W. P.
dc.contributor.utdAuthorCho, Kyeongjae
dc.contributor.utdAuthorKim, Jiyoung
dc.date.accessioned2017-12-20T23:43:47Z
dc.date.available2017-12-20T23:43:47Z
dc.date.created2016-02-22
dc.descriptionIncludes supplementary material.en_US
dc.description.abstractMolecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self-limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 Å per cycle at 150°C. The hybrid materials exhibit n-type semiconducting behavior with a field effect mobility of approximately 5.7 cm² V⁻¹ s⁻¹ and an on/off ratio of over 103 following post annealing at 200°C in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-Vis spectroscopy, transistor behavior, and Hall-effect measurements. Density functional theory (DFT) and many-body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n-channel materials as valuable candidates for efficient organic CMOS devices. © 2016.en_US
dc.description.sponsorshipNRF (2015M3D1A1068061)en_US
dc.identifier.bibliographicCitationHuang, J., H. Zhang, A. Lucero, L. Cheng, et al. 2016. "Organic-inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)." Journal of Materials Chemistry C 4(12), doi: 10.1039/c5tc03714jJ. Huang,en_US
dc.identifier.issn2050-7534en_US
dc.identifier.issue12en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/5612
dc.identifier.volume4en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.urihttp://dx.doi.org/10.1039/c5tc03714jen_US
dc.rights©2016 The Royal Society of Chemistry. This article may not be further made available or distributed.en_US
dc.source.journalJournal of Materials Chemistry Cen_US
dc.subjectAtomic layer depositionen_US
dc.subjectAnalog CMOS integrated circuitsen_US
dc.subjectDensity functionalsen_US
dc.subjectFourier transform infrared spectroscopyen_US
dc.subjectHigh resolution electron microscopyen_US
dc.subjectThin filmsen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectOptical spectroscopyen_US
dc.subjectHall effecten_US
dc.subjectPerturbation (Mathematics)en_US
dc.subjectSemiconductorsen_US
dc.subjectSemiconductor filmsen_US
dc.titleOrganic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)en_US
dc.type.genrearticleen_US

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Kim, Jiyoung
Cho, Kyeongjae
Hsu, Julia W. P.