In Situ Plasma Enhanced Atomic Layer Deposition Half Cycle Study of Al₂O₃ on AlGaN/GaN High Electron Mobility Transistors
| dc.contributor.author | Qin, Xiaoye | en_US |
| dc.contributor.author | Wallace, Robert M. | en_US |
| dc.date.accessioned | 2017-02-23T17:15:27Z | |
| dc.date.available | 2017-02-23T17:15:27Z | |
| dc.date.created | 2015 | en_US |
| dc.description | Includes supplementary information | en_US |
| dc.description.abstract | A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al₂O₃ on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H₂O precursor. The remote O₂ plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al₂O₃ growth on AlGaN/GaN devices. © 2015 AIP Publishing LLC. | en_US |
| dc.description.sponsorship | Air Force office of Scientific Research (AFOSR) grant no. FA2386-14-1-4069. | en_US |
| dc.identifier.bibliographicCitation | Qin, X., and R. M. Wallace. 2015. "In situ plasma enhanced atomic layer deposition half cycle study of Al₂O₃ on AlGaN/GaN high electron mobility transistors." Applied Physics Letters 107(8), doi: 10.1063/1.4929818 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.issue | 8 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10735.1/5269 | |
| dc.identifier.volume | 107 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics Inc. | en_US |
| dc.relation.uri | http://dx.doi.org/10.1063/1.4929818 | en_US |
| dc.rights | ©2015 AIP Publishing LLC | en_US |
| dc.source.journal | Applied Physics Letters | en_US |
| dc.subject | Aluminum alloys | en_US |
| dc.subject | Gallium nitride | en_US |
| dc.subject | X ray photoelectron spectroscopy | en_US |
| dc.subject | Modulation-doped field-effect transistors | en_US |
| dc.subject | Atomic layer deposition | en_US |
| dc.subject | Ions—Scattering | en_US |
| dc.subject | Aluminum oxide | en_US |
| dc.title | In Situ Plasma Enhanced Atomic Layer Deposition Half Cycle Study of Al₂O₃ on AlGaN/GaN High Electron Mobility Transistors | en_US |
| dc.type.genre | article | en_US |