Development and Characterization of Photodiode N-ZnO/p-Si By Radio Frecuency Sputtering, A Sensor with Low Voltage Operation and its Response to Visible and UV Light

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dc.contributor.authorChávez-Urbiola, Iker Rodrigo
dc.contributor.authorWillars-Rodriguez, F. J.
dc.contributor.authorRamirez Bon, R.
dc.contributor.authorVorobiev, P.
dc.contributor.authorVorobiev, Yu V.
dc.contributor.utdAuthorChávez-Urbiola, Iker Rodrigo
dc.date.accessioned2020-04-27T21:18:18Z
dc.date.available2020-04-27T21:18:18Z
dc.date.issued2018-10-11
dc.descriptionDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).
dc.description.abstractThe heterostructure n-ZnO/p-Si was fabricated by Radio Frequency Sputtering. The photodiode characteristics were obtained from current-voltage curves. The photovoltaic effect and photodiode sensitivity were measured by transient photo-current, both under UV-Light and VIS-Light. The results show a well define rectification character, the relation between current at forward bias and reverse bias was about two orders of magnitude. The photovoltaic effect was observed for UV and Vis light; the photodiode presents a higher sensitivity for Vis light than for UV light. The transient-photocurrent was recorded at a different voltage (-2, -1 and 0 V) under Vis and UV light. The photo-response for UV and Vis light at -1 V were 1.71 mA/W and 9.35 mA/W and for 0 V were 0.62 mA/W and 0.70 mA/W respectively.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationChávez-Urbiola, I. R., F. J. Willars-Rodriguez, R. Ramirez Bon, P. Vorobiev, et al. 2019. "Development and characterization of photodiode n-ZnO/p-Si by Radio Frecuency Sputtering, a sensor with low voltage operation and its response to visible and UV light." Thin Solid Films 669: 364-370, doi: 10.1016/j.tsf.2018.10.002
dc.identifier.issn0040-6090
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2018.10.002
dc.identifier.urihttps://hdl.handle.net/10735.1/8292
dc.identifier.volume669
dc.language.isoen
dc.publisherElsevier Science SA
dc.rights©2018 Elsevier B.V. All Rights Reserved.
dc.source.journalThin Solid Films
dc.subjectZinc oxide
dc.subjectSilicon
dc.subjectPhotodiodes
dc.subjectDetectors
dc.subjectThin films
dc.subjectPulsed laser deposition
dc.subjectHeterojunctions
dc.subjectTemperature
dc.subjectOptical detectors
dc.subjectMaterials science
dc.subjectPhysics
dc.titleDevelopment and Characterization of Photodiode N-ZnO/p-Si By Radio Frecuency Sputtering, A Sensor with Low Voltage Operation and its Response to Visible and UV Light
dc.type.genrearticle

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