Anomalously Large Resistance at the Charge Neutrality Point in a Zero-Gap InAs/GaSb Bilayer

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dc.contributor.authorYu, W.
dc.contributor.authorClerico, V.
dc.contributor.authorHernandez Fuentevilla, C.
dc.contributor.authorShi, Xiaoyan
dc.contributor.authorJiang, Y.
dc.contributor.authorSaha, D.
dc.contributor.authorLou, W. K.
dc.contributor.authorChang, K.
dc.contributor.authorHuang, D. H.
dc.contributor.authorGumbs, G.
dc.contributor.authorSmirnov, D.
dc.contributor.authorStanton, C. J.
dc.contributor.authorJiang, Z.
dc.contributor.authorBellani, V.
dc.contributor.authorMeziani, Y.
dc.contributor.authorDiez, E.
dc.contributor.authorPan, W.
dc.contributor.authorHawkins, S. D.
dc.contributor.authorKlem, J. F.
dc.contributor.utdAuthorShi, Xiaoyan
dc.date.accessioned2019-05-31T20:59:35Z
dc.date.available2019-05-31T20:59:35Z
dc.date.created2018-05-31
dc.descriptionIncludes supplementary material
dc.description.abstractWe report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (similar to 500 k Omega) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 Kand perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.
dc.description.departmentSchool of Natural Sciences and Mathematics
dc.description.sponsorshipUS Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division at Sandia, MINECO and FEDER MAT2013-46308-C2-1-R and MAT2016-75955-C2-2-R; Junta de Castilla y León SA045U16 at University of Salamanca; US Department of Energy (Grant No. DE-FG02-07ER46451); US Department of Energy, Office of Basic Energy Sciences user facility at Los Alamos National Laboratory (Contract No. DEAC52-06NA25396), and Sandia National Laboratories (Contract No. DE-AC04-94AL85000).
dc.identifier.bibliographicCitationYu, W., V. Clerico, C. Hernandez Fuentevilla, X. Shi, et al. 2018. "Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer." New Journal of Physics 20(5): art. 053062, doi:10.1088/1367-2630/aac595
dc.identifier.issn1367-2630
dc.identifier.issue5
dc.identifier.urihttps://hdl.handle.net/10735.1/6537
dc.identifier.volume20
dc.language.isoen
dc.publisherIOP Publishing Ltd
dc.relation.urihttp://dx.doi.org/10.1088/1367-2630/aac595
dc.rightsCC BY 3.0 (Attribution)
dc.rights©2018 The Authors
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.source.journalNew Journal of Physics
dc.subjectQuantum-wells
dc.subjectSemiconductos
dc.subjectElectron transport
dc.subjectIndium arsenide
dc.subjectGallium antimonide
dc.titleAnomalously Large Resistance at the Charge Neutrality Point in a Zero-Gap InAs/GaSb Bilayer
dc.type.genrearticle

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