GaSb Oxide Thermal Stability Studied by Dynamic-XPS



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AVS: Science & Technology of Materials, Interfaces, and Processing


The thermal decomposition of the native GaSb oxides is studied using time resolved x-ray photoelectron spectroscopy with a temperature resolution of better than 1 K. The expected transfer of oxygen from Sb-O to Ga-O before the eventual desorption of all oxides is observed. However, an initial reaction resulting in the reduction of Sb₂O₃ along with the concurrent increase in both Ga₂O₃ and Sb₂O₄ is detected in the temperature range of 450-525 K. Using the relative changes in atomic concentrations of the chemical species observed; the initial reaction pathway is proposed.



X-ray photoelectron spectroscopy, Gallium Antimonide (GaSb), Thermal stability, Gallium Oxide, Antimony Tetroxide

"The authors would like to acknowledge H. Dong for useful discussions. This work was supported by the Semiconductor Research Corporation Focus Center on Materials Structures and Devices (MSD), and by the Nanoelectronics Research Initiative (NRI) SWAN Center with the National Institute for Standards and Technology (NIST)."


©2014 American Vacuum Society