"Hot Electrons in Si Lose Energy Mostly to Optical Phonons:" Truth or Myth?

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dc.contributor.ORCID0000-0001-5926-0200 (Fischetti, MV)
dc.contributor.ORCID0000-0003-0067-8674 (Gaddemane, G)
dc.contributor.ORCID0000-0001-8014-0350 (Khatami, MM)
dc.contributor.ORCID0000-0001-9179-6443 (Van de Put, ML)
dc.contributor.authorFischetti, Massimo V.
dc.contributor.authorYoder, P. D.
dc.contributor.authorKhatami, Mohammad Mahdi
dc.contributor.authorGaddemane, Gautam
dc.contributor.authorVan De Put, Maarten L.
dc.contributor.utdAuthorFischetti, Massimo V.
dc.contributor.utdAuthorKhatami, Mohammad Mahdi
dc.contributor.utdAuthorGaddemane, Gautam
dc.contributor.utdAuthorVan De Put, Maarten L.
dc.date.accessioned2020-11-04T20:25:32Z
dc.date.available2020-11-04T20:25:32Z
dc.date.issued2019-06-05
dc.description.abstractTheoretical studies of heat generation and diffusion in Si devices generally assume that hot electrons in Si lose their energy mainly to optical phonons. Here, we briefly review the history of this assumption, and using full-band Monte Carlo simulations - with electron-phonon scattering rates calculated using the rigid-ion approximation and both empirical pseudopotentials and Harris potentials - we show that, instead, electrons lose as much as 2/3 of their energy to acoustic phonons. The scattering rates that we have calculated have been used to study hot-electron effects, such as impact ionization and injection into SiO2, and are in rough agreement with those obtained using density functional theory. Moreover, direct subpicosecond pump-probe experimental results, some of them dating back to 1994, are consistent with the predictions of our model. We conclude that the study of heat generation and dissipation in nanometer-scale Si devices may require a substantial revision of the assumptions that have been considered "common wisdom" so far. © 2019 Author(s).
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationFischetti, M. V., P. D. Yoder, M. M. Khatami, G. Gaddemane, et al. 2019. ""Hot electrons in Si lose energy mostly to optical phonons:" Truth or myth?" Applied Physics Letters 114(22) art. 222104, doi: 10.1063/1.5099914
dc.identifier.issn0003-6951
dc.identifier.issue22
dc.identifier.urihttp://dx.doi.org/10.1063/1.5099914
dc.identifier.urihttps://hdl.handle.net/10735.1/9071
dc.identifier.volume114
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.rights©2019 The Authors
dc.source.journalApplied Physics Letters
dc.subjectDensity functionals
dc.subjectElectrons
dc.subjectHeat
dc.subjectElectron impact ionization
dc.subjectMonte Carlo method
dc.subjectPhonons
dc.subjectSilica
dc.subjectPhonons, Acoustic
dc.subjectNanoelectromechanical systems
dc.subjectHot carriers
dc.title"Hot Electrons in Si Lose Energy Mostly to Optical Phonons:" Truth or Myth?
dc.type.genrearticle

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Fischetti, Massimo V.