Low-Temperature Thin Film Transistors Based on Pulsed Laser Deposited CdS Active Layers

dc.contributor.authorMartinez-Landeros, V. H.
dc.contributor.authorHernández-Como, N.
dc.contributor.authorGutierrez-Heredia, G.
dc.contributor.authorRamirez-Bon, R.
dc.contributor.authorQuevedo-López, Manuel A.
dc.contributor.authorAguirre-Tostado, F. S.
dc.contributor.utdAuthorQuevedo-López, Manuel A.
dc.date.accessioned2019-11-18T21:36:51Z
dc.date.available2019-11-18T21:36:51Z
dc.date.created2019-01-10
dc.description.abstractCadmium sulfide (CdS) thin films as n-type semiconductor material were deposited by pulsed laser deposition by varying the argon pressure at room temperature. The structural, morphological and stoichiometric characteristics of the CdS films were studied as a function of the deposition pressure. The results show that the argon deposition pressure had a dramatic impact on the CdS film properties. The CdS electrical resistivity increased 10 4 times when argon pressure was increased from 8 to 10.66 Pa. These films were employed on fully-patterned thin film transistors (TFTs) fabricated by a photolithography-based process, and their electrical characteristics were measured. The TFTs electrical performance achieved a mobility of ∼24 cm² /V-s with a threshold voltage from 1.5 to 12.6 V after testing. The deposition pressure of CdS for transistors fabrication, which optimizes the resulting electrical characteristics, was determined from this study. ©2019 IOP Publishing Ltd.
dc.description.sponsorshipFONCYT-COECYT (COAH-2016-C11-C67) project; CONACYT-Mexico grant CB-2014/240103.
dc.identifier.bibliographicCitationMartinez-Landeros, V. H., N. Hernández-Como, G. Gutierrez-Heredia, R. Ramirez-Bon, et al. 2019. "Low-temperature thin film transistors based on pulsed laser deposited CdS active layers." Semiconductor Science and Technology 34(2): art. 025008, doi: 10.1088/1361-6641/aaf66d
dc.identifier.issn0268-1242
dc.identifier.issue2
dc.identifier.urihttps://hdl.handle.net/10735.1/7117
dc.identifier.volume34
dc.language.isoen
dc.publisherInstitute of Physics Publishing
dc.relation.urihttps://dx.doi.org/10.1088/1361-6641/aaf66d
dc.rights©2019 IOP Publishing Ltd.
dc.source.journalSemiconductor Science and Technology
dc.subjectCadmium sulfide
dc.subjectPulsed laser deposition
dc.subjectThin film transistors
dc.subjectArgon lasers
dc.subjectSemiconductors
dc.subjectCadmium compounds, Semiconducting
dc.subjectSemiconductor lasers
dc.subjectTemperature
dc.subjectThin-film circuits
dc.subjectThin film transistors
dc.subjectThin films
dc.subjectVoltage--Threshold limit values
dc.subjectSulfur compounds
dc.titleLow-Temperature Thin Film Transistors Based on Pulsed Laser Deposited CdS Active Layers
dc.type.genrearticle

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