Real-Time Ageing Detection of SiC MOSFETs
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Institute of Electrical and Electronics Engineers Inc.
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Abstract
This paper presents a comprehensive study on degradation monitoring of SiC MOSFETs and proposes an early warning method to detect ageing. The proposed plug-in tool can be integrated to smart gate drivers or directly to power converters. During the accelerated ageing tests (power cycling within safe operating area) several electrical parameters are monitored to find out critical signatures and precursors of failure. Among those, gate leakage current is identified as the most practical precursor which exhibits consistent changes in all aged devices and is relatively easy to monitor. Due to its simple scheme and low cost, it can potentially be embedded into commercial gate drivers featuring improved reliability options. ©2018 IEEE
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Keywords
Metal oxide semiconductor field-effect transistors, Reliability, Silicon carbide, Temperature measurements
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This work was supported in part by the Office of Naval Research under Award N00014-15-1-2325 and in part by the TxACE under Task ID 2712.026.
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©2018 IEEE