In Situ Study of E-Beam Al And Hf Metal Deposition on Native Oxide InP (100)
dc.contributor.author | Dong, Hong | en_US |
dc.contributor.author | Santosh, KC | en_US |
dc.contributor.author | Azcatl, Angelica | en_US |
dc.contributor.author | Cabrera, Wilfredo | en_US |
dc.contributor.author | Qin, Xiaoye | en_US |
dc.contributor.author | Brennan, Barry | en_US |
dc.contributor.author | Zhernokletov, Dmitry | en_US |
dc.contributor.author | Cho, Kyeongjie | en_US |
dc.contributor.author | Wallace, Robert M. | en_US |
dc.date.accessioned | 2014-07-11T16:34:21Z | |
dc.date.available | 2014-07-11T16:34:21Z | |
dc.date.created | 2013-11-25 | |
dc.date.submitted | 2013-10-07 | en_US |
dc.description.abstract | The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior. | en_US |
dc.identifier.citation | Dong, H., KC Santosh, A. Azcatl, W. Cabrera, et al. 2013. "In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)." 114(20) | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.issue | 203505 | en_US |
dc.identifier.uri | http://hdl.handle.net/10735.1/3649 | |
dc.identifier.volume | 114 | en_US |
dc.language.iso | en | en_US |
dc.relation.uri | http://dx.doi.org/10.1063/1.4833569 | en_US |
dc.rights | ©2013 AIP Publishing LLC | en_US |
dc.source.journal | Journal of Applied Physics | en_US |
dc.subject | Annealing of metals | en_US |
dc.subject | Oxides | en_US |
dc.subject | Indium phosphide | en_US |
dc.title | In Situ Study of E-Beam Al And Hf Metal Deposition on Native Oxide InP (100) | en_US |
dc.type | text | en_US |
dc.type.genre | article | en_US |