Sensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time

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dc.contributor.authorBolshakov, Pavel
dc.contributor.authorKhosravi, Ava
dc.contributor.authorZhao, Peng
dc.contributor.authorWallace, Robert M.
dc.contributor.authorYoung, Chadwin D.
dc.contributor.authorHurley, P. K.
dc.contributor.utdAuthorBolshakov, Pavel
dc.contributor.utdAuthorKhosravi, Ava
dc.contributor.utdAuthorZhao, Peng
dc.contributor.utdAuthorWallace, Robert M.
dc.contributor.utdAuthorYoung, Chadwin D.
dc.date.accessioned2019-10-18T21:31:17Z
dc.date.available2019-10-18T21:31:17Z
dc.date.created2018-03
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).
dc.description.abstractHigh-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage. © 2018 IEEE.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationBolshakov, P., A. Khosravi, P. Zhao, R. M. Wallace, et al. 2018. "Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time." 2018 IEEE International Conference on Microelectronic Test Structures: 161-165, doi: 10.1109/ICMTS.2018.8383789
dc.identifier.isbn9781538650691
dc.identifier.urihttps://hdl.handle.net/10735.1/7018
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isPartOf2018 IEEE International Conference on Microelectronic Test Structures
dc.relation.urihttp://dx.doi.org/10.1109/ICMTS.2018.8383789
dc.rights©2018 IEEE
dc.subjectElectric fields
dc.subjectHafnium compounds
dc.subjectSemiconductors
dc.subjectMicroelectronics
dc.subjectMolybdenum compounds
dc.subjectElectromotive force
dc.subjectField-effect transistors
dc.titleSensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time
dc.type.genrearticle

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