Tunneling Characteristics in Chemical Vapor Deposited Graphene-Hexagonal Boron Nitride-Graphene Junctions



Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene-hexagonal boron nitride-graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene-hexagonal boron nitride-graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.



Graphene, Tunneling, Chemical vapor deposition (CVD), Boron nitride



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Roy, T., L. Liu, S. de la Barrera, B. Chakrabarti, et al. 2014. "Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions." Applied Physics Letters 104(12): 123506-1 to 5.