High Quality HfO₂/p-GaSb(001) Metal-Oxide-Semiconductor Capacitors with 0.8 Nm Equivalent Oxide Thickness

Simple item page
dc.contributor.authorBarth, Michaelen_US
dc.contributor.authorRayner, G. Bruce,Jr.en_US
dc.contributor.authorMcDonnell, Stephenen_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.authorBennett, Brian R.en_US
dc.contributor.authorEngel-Herbert, Romanen_US
dc.contributor.authorDatta, Sumanen_US
dc.date.accessioned2015-01-14T17:01:02Z
dc.date.available2015-01-14T17:01:02Z
dc.date.created2014-12-02
dc.description.abstractWe investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO₂ films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO₂/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8 nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb. (c) 2014 AIP Publishing LLC.en_US
dc.description.sponsorshipUS Defense Threat Reduction Agency (DTRA) under Award No. HDTRA1-12-1-0026.en_US
dc.identifier.citationBarth, Michael, G. Bruce,Jr. Rayner, Stephen McDonnell, Robert M. Wallace, et al. 2014. "High quality HfO₂/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness." Applied Physics Letters 105(22): 222103-1 to -5.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue22en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4264
dc.identifier.volume105en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4903068en_US
dc.rights©2014 AIP Publishing LLCen_US
dc.source.journalApplied Physics Lettersen_US
dc.subjectGallium(III) Antimonide (GaSb)en_US
dc.subjectHafnium Oxide (HfO₂)en_US
dc.subjectMetal oxide semiconductorsen_US
dc.subjectCapacitorsen_US
dc.titleHigh Quality HfO₂/p-GaSb(001) Metal-Oxide-Semiconductor Capacitors with 0.8 Nm Equivalent Oxide Thicknessen_US
dc.type.genrearticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
JECS-FR-RMWallace-271598.25.pdf
Size:
3.85 MB
Format:
Adobe Portable Document Format
Description:
Article
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
American Institute of Physics.pdf
Size:
244.91 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Wallace, Robert M.
JECS Staff and Student Research