Layered metal dichalcogenides (LMDs) have outstanding intrinsic properties and are considered potential candidate electronic materials for emerging devices in the fields of optoelectronics, piezoelectronics, and lately in spintronics. However, for the implementation of these materials on large scale applications, new synthesis methods that enable deposition with controlled area and geometry are needed. This work explores Pulsed Laser Deposition (PLD), as a new technique for the development of layered dichalcogenides materials. In particular, MoS2, SnSe2, and MoSe2 deposition parameters are explored, using materials characterization techniques such as X-ray photoelectron spectroscopy, Atomic Force Microscopy, Transmission Electron Microscopy, Raman Spectroscopy, Rutherford Backscattering Spectrometry, X-Ray diffraction, and in-situ Residual Gas Analysis – Mass Spectrometry. The structure, morphology and chemistry of each of the thin films is used to estimate the quality of the thin films. In addition, electrical characterization such as Hall effect measurements and the first SnSe2 PLD-grown/Silicon junction diodes are demonstrated.