Seeded Growth of Boron Arsenide Single Crystals with High Thermal Conductivity

dc.contributor.authorTian, Feien_US
dc.contributor.authorSong, Baien_US
dc.contributor.authorLv, Bingen_US
dc.contributor.authorSun, Jingyingen_US
dc.contributor.authorHuyan, Shuyuanen_US
dc.contributor.authorWu, Qien_US
dc.contributor.authorMao, Junen_US
dc.contributor.authorNi, Yizhouen_US
dc.contributor.authorDing, Zhiweien_US
dc.contributor.authorHuberman, Samuelen_US
dc.contributor.authorLiu, Te-Huanen_US
dc.contributor.authorChen, Gangen_US
dc.contributor.authorChen, Shuoen_US
dc.contributor.authorChu, Ching-Wuen_US
dc.contributor.authorRen, Zhifengen_US
dc.contributor.utdAuthorLv, Bingen_US
dc.date.accessioned2018-11-05T21:09:50Z
dc.date.available2018-11-05T21:09:50Z
dc.date.created2018-01-16en_US
dc.date.issued2018-11-05
dc.descriptionIncludes supplementary materialen_US
dc.description.abstractMaterials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000W m⁻¹ K⁻¹ at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m⁻¹ K⁻¹ at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.en_US
dc.description.departmentSchool of Natural Sciences and Mathematicsen_US
dc.description.sponsorshipThis work was funded by the Office of Naval Research under a MURI Grant N00014-16-1-2436, U.S. Air Force Office of Scientific Research Grant FA9550-15-1-0236.en_US
dc.identifier.bibliographicCitationTian, Fei, Bai Song, Bing Lv, Jingying Sun, et al. 2018. "Seeded growth of boron arsenide single crystals with high thermal conductivity." Applied Physics Letters 112(3), doi:10.1063/1.5004200en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue3en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6285
dc.identifier.volume112en_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.5004200
dc.rights©2018 American Institute of Physics. All Rights Reserved.en_US
dc.sourceApplied Physics Letters
dc.subjectCrystallographyen_US
dc.subjectPolycrystalsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectTransition metalsen_US
dc.subjectChemical elementsen_US
dc.subjectArsenidesen_US
dc.subjectThermal conductivityen_US
dc.subjectMetrologyen_US
dc.titleSeeded Growth of Boron Arsenide Single Crystals with High Thermal Conductivityen_US
dc.type.genrearticleen_US

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