In-Pixel Sensor Amplification Platforms Based on Polycrystalline Silicon Thin-Film Transistors

New thin-film electronics are constantly under development thanks to their compatibility with large-area and low-cost applications. Materials such as hydrogenated amorphous silicon are commonly used in X-ray imagers. However, other types of ionizing and non-ionizing radiation such as neutrons and deep-ultraviolet (DUV) light still lack a reliable technology that is largearea and low-cost compatible. While great efforts are focused on developing new materials f or sensors, methods to integrate these sensors with the required electronics to deliver complete systems that are fully compatible with large-area applications are missing. Polycrystalline silicon (poly-Si) offers a mature technology with high performance compared to other thin-film transistors (TFTs). Therefore, complete large-area detector systems can be implemented through the integration of thin-film sensors and poly-Si TFTs. In this dissertation, a platform based on poly-Si TFTs for in-pixel amplification for different types of large-area radiation sensors is studied. Methods to integrate cadmium sulfide/cadmium telluride thin -film P-N diodes for neutron detection and gallium oxide photoresistors for DUV sensing with this platform are presented and validated through the fabrication of active pixel sensors.