In-Pixel Sensor Amplification Platforms Based on Polycrystalline Silicon Thin-Film Transistors



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New thin-film electronics are constantly under development thanks to their compatibility with large-area and low-cost applications. Materials such as hydrogenated amorphous silicon are commonly used in X-ray imagers. However, other types of ionizing and non-ionizing radiation such as neutrons and deep-ultraviolet (DUV) light still lack a reliable technology that is largearea and low-cost compatible. While great efforts are focused on developing new materials f or sensors, methods to integrate these sensors with the required electronics to deliver complete systems that are fully compatible with large-area applications are missing. Polycrystalline silicon (poly-Si) offers a mature technology with high performance compared to other thin-film transistors (TFTs). Therefore, complete large-area detector systems can be implemented through the integration of thin-film sensors and poly-Si TFTs. In this dissertation, a platform based on poly-Si TFTs for in-pixel amplification for different types of large-area radiation sensors is studied. Methods to integrate cadmium sulfide/cadmium telluride thin -film P-N diodes for neutron detection and gallium oxide photoresistors for DUV sensing with this platform are presented and validated through the fabrication of active pixel sensors.



Thin film transistors, Silicon crystals, Large scale systems