Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering

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JECS-3651-279754.06-LINK.pdf (164.95 KB)

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Institute of Electrical and Electronics Engineers Inc.

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https://hdl.handle.net/10735.1/6696

Abstract

Defect engineering of 2D semiconducting transition metal dichalcogenides (TMDCs) has been demonstrated to be a promising way to tune both their bandgaps and carrier concentrations. Moreover, controlled introduction of defects in the source/drain access regions of a TMDC FET can boost its performance by decreasing the contact resistance at the metallTMDC interface [1]. While chemical functionalization offers a facile route towards defect engineering in 2D TMDCs, several chemically-treated TMDCs have not been fully understood at the molecular level. In this study, chemical sulfur treatment (ST) utilizing ammonium sulfide [(NH4)2S] solution is shown to enhance the p-type behavior in 2D WSe2 via introduction of acceptor defect states near its valence band edge (VBE), with the results verified using detailed scanning tunneling microscopy (STM)/spectroscopy (STS) studies, field-effect transistor (FET) measurements and theoretical density-of-states (DOS) calculations.

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Semiconductors--Defects, Field-effect transistors, Scanning tunneling microscopy, Selenium compounds, Sulfur compounds, Transition metals, Sulfides—Ammonium, Tungsten compounds

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©2018 IEEE

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