Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process
Date
2019-05-06
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Volume Title
Publisher
Blackwell Publishing Ltd
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Abstract
A method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n-type dopant) and poly(acrylic acid) (as a p-type dopant), are used to pre-set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n-type graphene) and 1.2 V (p-type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene–semiconductor junction-based devices, which is a crucial function required to implement graphene-based electronic devices in integrated circuits. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Keywords
Graphene, Heterojunctions, Modulation (Electronics), Polyethylene, Semiconductor doping, Wide gap semiconductors, Zinc oxide, Semiconductors, Polyethyleneimine
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Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068062, 2017M3D1A1040828), Nano Materials Technology Development Program (2016M3A7B4909942), and Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (2013M3A6B1078873).
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©2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim