Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process


A method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n-type dopant) and poly(acrylic acid) (as a p-type dopant), are used to pre-set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n-type graphene) and 1.2 V (p-type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene–semiconductor junction-based devices, which is a crucial function required to implement graphene-based electronic devices in integrated circuits. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


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Graphene, Heterojunctions, Modulation (Electronics), Polyethylene, Semiconductor doping, Wide gap semiconductors, Zinc oxide, Semiconductors, Polyethyleneimine

Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068062, 2017M3D1A1040828), Nano Materials Technology Development Program (2016M3A7B4909942), and Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (2013M3A6B1078873).


©2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim