Study and Optimization of PECVD Films Containing Fluorine and Carbon as Ultra Low Dielectric Constant Interlayer Dielectrics in ULSI Devices

dc.contributor.ISNI0000 0001 3865 4673 (Lee, GS)en_US
dc.contributor.ISNI0000 0000 5396 3610 (Goeckner, MJ)en_US
dc.contributor.ISNI0000 0003 5379 4329 (Overzet, LJ)en_US
dc.contributor.authorSundaram, Nandinien_US
dc.contributor.authorLee, Gil Siken_US
dc.contributor.authorGoeckner, Matthew J.en_US
dc.contributor.authorOverzet, Lawrence J.en_US
dc.contributor.utdAuthorSundaram, Nandini
dc.contributor.utdAuthorLee, Gil Sik
dc.contributor.utdAuthorGoeckner, Matthew J.
dc.contributor.utdAuthorOverzet, Lawrence J.
dc.date.accessioned2016-12-16T23:07:31Z
dc.date.available2016-12-16T23:07:31Z
dc.date.created2015-07-01en_US
dc.description.abstractFluorinated amorphous carbon films that are thermally stable at 400 ⁰C have been deposited in a plasma enhanced chemical vapor deposition system using tetrafluorocarbon and disilane (5% by volume in helium) as precursors. The bulk dielectric constant (k) of the film has been optimized from 2.0/2.2 to 1.8/1.91 as-deposited and after heat treatment, by varying process parameters including power density, deposition temperature, and wall temperature. Films, failing shrinkage rate requirements, possessing promising k-values have been salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap have been evaluated by varying process pressure, power, substrate temperature, and flow rate ratio of processing gases. Both x-ray photoelectron spectroscopy and FTIR results confirm that the stoichiometry of the ultralow k film is close to that of CF₂ with no oxygen. C-V characteristics indicate the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 and 3.4 eV.en_US
dc.description.sponsorshipThis work was partially supported by Lockheed Martin and the University of Texas at Dallas.en_US
dc.identifier.bibliographicCitationSundaram, Nandini, Gil Sik Lee, Matthew Goeckner, and Lawrence J. Overzet. 2015. "Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices." Journal of Vacuum Science & Technology B 33(4), doi: 10.1116/1.4922258en_US
dc.identifier.issn1071-1023en_US
dc.identifier.issue4en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/5177
dc.identifier.volume33en_US
dc.language.isoenen_US
dc.publisherA V S Amer Inst Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1116/1.4922258en_US
dc.rights©2015 American Institute of Physicsen_US
dc.source.journalJournal of Vacuum Science & Technology Ben_US
dc.subjectChemical vapor depositionen_US
dc.subjectFluorocarbonsen_US
dc.subjectThin filmsen_US
dc.subjectSilicon oxide filmsen_US
dc.subjectPlasma-enhanced chemical vapor depositionen_US
dc.titleStudy and Optimization of PECVD Films Containing Fluorine and Carbon as Ultra Low Dielectric Constant Interlayer Dielectrics in ULSI Devicesen_US
dc.type.genrearticleen_US

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