Evaluation and Integration of Graphene Field Effect Devices



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Graphene field effect devices have potential applications in emerging analogue and sensing technology. However, to use them in end applications, evaluation of such devices in terms of mobility, contact resistivity, and sheet resistance is pivotal. These fundamental parameters will dictate and enable the designing of futuristic graphene-based devices. Finally, these devices should be packaged depending on the final application or for further evaluation in an industrial perspective. This work explores the evaluation of graphene field effect devices that has been fabricated using Chemical Vapor Deposition (CVD) graphene source with optimization of the device fabrication process flows on 90 nmSiO2 using materials characterization techniques such as Raman spectroscopy, Atomic Force Microscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry. The issues arising with dual-gated graphene transistor is identified and one of the potential solutions to downscale the back-gate dielectric is demonstrated. Critical device parameters like mobility, contact resistivity of graphene devices are evaluated and final integration of such devices at a package level is demonstrated. For commercialization of graphene nanoelectronics, heterogeneous integration of graphene devices on commercially available CMOS substrate is the key and process flow for such devices is demonstrated. Additionally, a novel device architecture to electrically dope graphene in the contact regions is identified and this could pave way for implementation of futuristic graphene devices with tailored device properties.



Graphene, Metal oxide semiconductors, Complementary