Azcatl, AngelicaWang, QingxiaoKim, Moon J.Wallace, Robert M.2018-06-012018-06-012017-08-222166-532Xhttp://hdl.handle.net/10735.1/5813Includes supplementary material.In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al₂O₃ films on WSe₂ was investigated. It was found that the ozone-based atomic layer deposition enhanced the nucleation of Al₂O₃ in comparison to the water/TMA process. In addition, the chemistry at the Al₂O₃ / WSe₂ interface and the surface morphology of the Al₂O₃ films exhibited a dependence on the deposition temperature. A non-covalent functionalizing effect of ozone on WSe₂ at low deposition temperatures 30 ⁰C was identified which prevented the formation of pinholes in the Al₂O₃ films. These findings aim to provide an approach to obtain high-quality gate dielectrics on WSe₂ for two-dimensional transistor applications.CC BY 4.0 (Attribution)©2017 The Authorshttp://creativecommons.org/licenses/by/4.0/DielectricsCrystallographyAir--PollutionSemimetalsAtomic layer depositionChemicalsThin filmsarticleAzcatl, Angelica, Qingxiao Wang, Moon J. Kim, and Robert M. Wallace. 2017. "Al₂O₃ on WSe₂ by ozone based atomic layer deposition: Nucleation and interface study." APL Materials 5(8), doi:10.1063/1.499212058