Xu, S.Shen, J.Long, G.Wu, Z.Bao, Zhi-qiangLiu, Cheng-ChengXiao, X.Han, T.Lin, J.Wu, Y.Lu, H.Hou, J.An, L.Wang, Y.Cai, Y.Ho, K. M.He, Y.Lortz, R.Zhang, FanWang, N.2018-09-242018-09-242017-02-102017-02-100031-9007http://hdl.handle.net/10735.1/6127Includes supplementary materialWe fabricate high-mobility p-type few-layer WSe₂ field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe₂, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe₂ offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.en©2017 American Physical Society.Magnetic fieldsMagnetic susceptibilityQuantum Hall effectQuantum theoryCyclotronsLandau levelsField-effect transistorsTungsten(IV) SelenidearticleXu, S., J. Shen, G. Long, Z. Wu, et al. 2017. "Odd-integer quantum hall states and giant spin susceptibility in p -type few-layer WSe₂." Physical Review Letters 118(6), doi:10.1103/PhysRevLett.118.0677021186