Kim, Si JoonNarayan, DushyantLee, Jae-GilMohan, JaidahLee, Joy S.Lee, JaebeomKim, Harrison S.Byun, Young-ChulLucero, Antonio T.Young, Chadwin D.Summerfelt, Scott R.San, TamerColombo, LuigiKim, Jiyoung2018-10-222018-10-222017-12-122018-10-220003-6951http://hdl.handle.net/10735.1/6208Includes supplementary materialWe report on atomic layer deposited Hf₀․₅Zr₀․₅0₂ (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm²) and a low FE saturation voltage (~1.5V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90nm. The TiN films are deposited at room temperature and annealed at 400 ⁰C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.en©2018 AIP PublishingThin-filmsFluorous acidZirconium oxideFerroelectricityarticleKim, Si Joon, Dushyant Narayan, Jae-Gil Lee, Jaidah Mohan, et al. 2017. "Large ferroelectric polarization of TiN/Hf₀․₅Zr₀․₅0₂ capacitors due to stress-induced crystallization at low budget." Applied Physics Letters 111(24), doi:10.1063/1.499561911124