Gutierrez-Heredia, GeradoMaeng, JiminConde, J.Rodriguez-Lopez, O.Voit, Walter E.2019-06-282019-06-282018-07-250268-1242https://hdl.handle.net/10735.1/6630Full text access from Treasures at UT Dallas is restricted to current UTD affiliates.The effect of annealing atmosphere on indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) fabricated on a deformable softening polymer substrate is presented in this work. Different annealing conditions - ambient, oxygen, vacuum and forming gas - are employed in the fabrication of IGZO TFTs and the changes in electrical characteristics are examined. Fabricated devices exhibit shape memory properties due to thiol-ene/acrylate substrates allowing the softening of bioelectronics to demonstrate modulus changes in aqueous conditions at body temperature. Gold (Au) is used as the contact metal for the gate, drain and source for its good adherence and malleability required for this polymer. It is found that annealing treatments at 250 °C can improve the field effect mobility of the TFTs from 10⁻² up to 30 cm² V⁻¹ s⁻¹. These improvements are attributed to the reduction of oxygen concentration in the active film of the TFTs. The contact resistance is also reduced by the annealing treatments from approximately 1 MΩ to 20 kΩ, indicating improvement in physical contact at the IGZO-Au interface. In addition, the contributions of contact resistance and channel resistance to other electrical parameters are analyzed. This study will pave the way for the development and optimization of high-performance bioelectronic devices on smart polymers.en©2018 IOP Publishing Ltd.Indium gallium zinc oxideThin film transistorsDeformations (Mechanics)Gallium compoundsSemiconductorsOxygenPolymersSemiconductiors--Indium compoundsThin-film circuitsThin filmsZinc oxideBioelectronicsarticleGutierrez-Heredia, G., J. Maeng, J. Conde, O. Rodriguez-Lopez, et al. 2018. "Effect of annealing atmosphere on IGZO thin film transistors on a deformable softening polymer substrate." Semiconductor Science and Technology 33(9): art. 095001, doi:10.1088/1361-6641/aad293339