Dong, HongSantosh, KCQin, XiaoyeBrennan, BarryMcDonnell, StevenZhernokletov, DmitryHinkle, Christopher L.Kim, JiyoungCho, KyeongjieWallace, Robert M.2014-07-112014-07-112013-10-162013-10-162013-09-06Dong, H., K. C. Santosh, X. Qin, B. Brennan, et al. 2013. "In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP." 114(154105): 1-5.0021-8979http://hdl.handle.net/10735.1/3650The dependence of the "self cleaning" effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO₂ on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO₂ at different temperatures. An (NH₄)₂ S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200°C, 250°C and 300°C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.en©2013 AIP Publishing LLCOxidesS-passivated samplesHafnium oxideIndium phosphidetext114154105