Feng, Z.Peng, Y.Liu, H.Sun, Y.Wang, Y.Meng, M.Liu, H.Wang, J.Wu, R.Wang, XingluCho, KyeongjaeHan, G.Dong, H.2020-03-112020-03-112019-05-250169-4332http://dx.doi.org/10.1016/j.apsusc.2019.05.282https://hdl.handle.net/10735.1/7389Supplementary material is available on publisher's website. Use the DOI link below.Hafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOₓ film is critical to obtain high device performance. The band alignment of Hf₀.₅Zr₀.₅O₂/SiOₓ/Ge system before and after post deposition annealing at 500 °C is studied via angle resolved X-ray photoelectron spectroscopy, synchrotron radiation photoemission spectroscopy and UV–Visible spectroscopy. The band gap of Hf₀.₅Zr₀.₅O₂ is seen narrowed 0.27 ± 0.05 eV, and the valence band offset between Hf₀.₅Zr₀.₅O₂ and Ge decreases 0.25 eV ± 0.05 eV after PDA at 500 °C. Therefore, the conduction band offset is nearly unchanged. This work gives insights into the interface physics about Hf₀.₅Zr₀.₅O₂/SiOₓ and is valuable for Ge-based NC pFETs. ©2019 Elsevier B.V.en©2019 Elsevier B.V. All Rights Reserved.GermaniumHafnium zirconium oxideEnergy gap (Physics)Field-effect transistorsGermaniumHafnium oxidesMolecular orbitalsPhotoelectron spectroscopySilicon compoundsSynchrotron radiationX ray photoelectron spectroscopyField-effect transistorsZirconium compoundsarticleFeng, Z., Y. Peng, H. Liu, Y. Sun, et al. 2019. "The band structure change of Hf₀.₅Zr₀.₅O₂/Ge system upon post deposition annealing." Applied Surface Science 488: 778-782, doi: 10.1016/j.apsusc.2019.05.282488