Frensley, William R.2019-04-252019-04-252018-122018-12December 2https://hdl.handle.net/10735.1/6373Accurate measurement of substrate temperature is one of the most critical process control parameters for molecular beam epitaxy (MBE) growth. Band-edge thermometry instruments have proven to be a valuable tool for process control during MBE growth of semiconductor films, providing as high as ±1 °C temperature resolution. The increasing use of InAs, GaSb, and AlSb III-V materials necessitates a method for accurately measuring the temperature of their lattice-matched GaSb substrates. Current-technology instruments typically rely on InGaAs detector materials which have a maximum wavelength λ detection of ~1.7 µm, but GaSb substrates have a band gap corresponding to > 2 µm wavelength. MBE growth needs a band-edge thermometry instrument capable of λ > 2 µm for process control. Such an instrument has been developed using an InAs/InGaSb strained-layer superlattice detector sensitive sensitive to 2-9.5 µm long-wave IR wavelengths.application/pdfenMetrologyTemperature measuring instrumentsInfrared spectroscopySemiconductorsSoftware engineeringEpitaxyDissertation2019-04-25