Park, Tae JooByun, Young-ByunWallace, Robert M.Kim, Jiyoung2018-09-242018-09-242017-02-032018-09-240021-9606http://hdl.handle.net/10735.1/6104Atomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O₃ formed the solid SiO₂ interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO₃ on increasing the O₃ pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La₂O₃, during which most of the La₂O₃ phase was consumed at 400 °C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 °C.enCC BY 4.0 (Attribution)©2017 The Authorshttp://creativecommons.org/licenses/by/4.0/Atomic layer depositionSilicatesX-ray photoelectron spectroscopyThin films--GrowthOxidationOrganic compoundsarticlePark, T. J., Y. -C Byun, R. M. Wallace, and J. Kim. 2017. "Impurity and silicate formation dependence on O₃ pulse time and the growth temperature in atomic-layer-deposited La₂O₃ thin films." Journal of Chemical Physics 146(5), doi:10.1063/1.49750831465