Gohil, Ghanshyamsinh2021-09-202021-09-202020-052020-04-30May 2020https://hdl.handle.net/10735.1/9249The ever growing consumption of data and its handling has resulted in huge server stations which cover prime land space and consumes huge amounts of power at low voltages causing high inefficiency. This work attempts to evaluate the design of a GaN based high efficiency and high power density server PSU. A two-stage topology is considered where an active front end rectifier converts 208VAC 3-phase supply to 380VDC. An isolated DC-DC LLC converter employing a planar integrated matrix transformer steps down the 380VDC to 48VDC for further distribution in the server rack. The rectifier switches and the primary switches in the LLC are GaN MOSFETs. The analytical loss and volume model of the converter are derived and a multi-objective design optimization for reduction in loss and volume is performed. Hence, a suitable converter design parameter is selected and a prototype design is considered.application/pdfenData processing service centersDC-to-DC convertersMetal oxide semiconductor field-effect transistorsThesis2021-09-20