Dyer, G. C.Shi, XiaoyanOlson, B. V.Hawkins, S. D.Klem, J. F.Shaner, E. A.Pan, W.2016-07-212016-07-212016-01-072016-01-070003-6951http://hdl.handle.net/10735.1/4962Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.en©2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.HeterojunctionsIndium antimonideQuantum chemistrySemiconductorsQuantum wellsArticleDyer, G. C., X. Shi, B. V. Olson, S. D. Hawkins, et al. 2016. "Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure." Applied Physics Letters 108(1), doi:10.1063/1.4939234.1081