Khosravi, AvaAddou, RafikSmyth, Christopher M.Yue, RuoyuCormier, Christopher R.Kim, JiyoungHinkle, Christopher L.Wallace, Robert M.2018-10-222018-10-222018-01-082018-10-222166-532Xhttp://hdl.handle.net/10735.1/6207Includes supplementary materialCovalent p-type doping of WSe₂ thin films grown by molecular beam epitaxy and WSe₂ exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe₂ lattice as well as tunable nitrogen concentration with N₂ plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe₂ lattice after N₂ plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N₂ plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.enCC BY 4.0 (Attribution)©2018 The Authorshttp://creativecommons.org/licenses/by/4.0/Atomic force microscopySemiconductor dopingEpitaxyMolecular beam epitaxyMolecular beamsNitrogenNitrogen compoundsNitrogen plasmasScanning tunneling microscopySelenium compoundsMaterials—Compression testingX-ray photoelectron spectroscopyTungsten compoundsarticleKhosravi, A., R. Addou, C. M. Smyth, R. Yue, et al. 2018. "Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe₂." APL Materials 6(2), doi:10.1063/1.500213262