Makela, J.Tuominen, M.Yasir, M.Kuzmin, M.Dahl, J.Punkkinen, M. P. J.Laukkanen, P.Kokko, K.Wallace, Robert M.2017-02-232017-02-232015-08-120003-6951http://hdl.handle.net/10735.1/5270Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 x 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 x 3)-O free of gap states.©2015 AIP Publishing LLC.Gallium(III) AntimonideGallium alloysOxidationSemiconductorsScanning tunneling microscopyLow energy electron diffractionarticleMakela, J., M. Tuominen, M. Yasir, M. Kuzmin, et al. 2015. "Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy." Applied Physics Letters 107(6), doi:10.1063/1.49285441076