Brennan, BarryQin, XiaoyeDong, HongKim, JiyoungWallace, Robert M.2013-01-152013-01-152012-11-102012-11-10http://hdl.handle.net/10735.1/2500Use the DOI address to see the article abstract. A subscription or fee may be necessary to view the article.© 2012 American Institute of Physics. This article may be downloaded for personal use only.Atomic layer depositionX-ray photoelectron spectroscopy.Atomic layer depositionIn situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaNTextBrennan, B., X. Qin, H. Dong, J. Kim, and R.M. Wallace. “In Situ Atomic Layer Deposition Half Cycle Study of Al2O 3 Growth on AlGaN.” Applied Physics Letters 101, no. 21 (2012).