Bolshakov, PavelKhosravi, AvaZhao, PengHurley, P. K.Hinkle, Christopher L.Wallace, Robert M.Young, Chadwin D.2019-06-282019-06-282018-06-18https://hdl.handle.net/10735.1/6628Includes supplementary materialHigh quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant improvement in device performance due to the insertion of the thin Al₂O₃ layer. The results show that the Al₂O₃ buffer layer improves the interface quality by effectively reducing the net fixed positive oxide charge at the top-gate MoS₂/high-k dielectric interface. Dual-gate sweeping, where both the top-gate and the back-gate are swept simultaneously, provides significant insight into the role of these oxide charges and improves overall device performance. Dual-gate transistors encapsulated in an Al₂O₃ dielectric demonstrate a near-ideal subthreshold swing of ~60 mV/dec and a high field effect mobility of 100 cm²/V·s.en©2018 The AuthorsAluminum oxideDielectricsField-effect transistorsHafnium oxideSemiconductorsMolybdenum compoundsSulfur compoundsarticleBolshakov, P., A. Khosravi, P. Zhao, P. K. Hurley, et al. 2018. "Dual-gate MoS₂ transistors with sub-10 nm top-gate high-k dielectrics." Applied Physics Letters 112(25): art. 256502, doi:10.1063/1.502710211225