Kshattry, SandeepO, Kenneth K.2019-08-272019-08-272018-06-109781538650677https://hdl.handle.net/10735.1/6798Full text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).A wideband (265-300 GHz) and high impedance root-mean-square (RMS) detector for on-chip voltage measurements is demonstrated in a 45-nm bulk CMOS process. The detector responsivity is ~70V/W at 10-nA bias. Adding the detector increases the loss of a 140-µm long GCPW thru structure by less than 0.2 dB up to 300 GHz. The compact RMS detectors are placed under a grounded coplanar waveguide feed to a patch antenna with virtually no area penalty, and used to measure the standing wave voltages. The minimum detectable signal of detector is ~37 dBm with a dynamic range of ~40 dB.en©2018 IEEEMetal oxide semiconductor field-effect transistorsWave guidesElectric currents--GroundingMicrostrip antennasMillimeter wavesRadioactive decontaminationSlot antennasHigh voltages--MeasurementSignal detectionImpedance (Electricity)Standard deviationsStanding wavearticleKshattry, S., and Kenneth K. O, 2018. "On-Chip High Impedance RMS Voltage Measurements at 265-300 GHz." IEEE MTT-S International Microwave Symposium Digest, 2018: 1164-1167, doi:10.1109/MWSYM.2018.8439453