Greene-Diniz, GabrielFischetti, Massimo V.Greer, J. C.2016-09-272016-09-272016-02-050021-8979http://hdl.handle.net/10735.1/5082Includes erratumSeveral theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In(x)Ga(1-x)As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L-and X-valley minima are ~1 eV and ~1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.en©2015 American Institute of PhysicsSemiconductorsCrystalsMonte Carlo methodSphaleriteAlloysarticleGreene-Diniz, Gabriel, M. V. Fischetti, and J. C. Greer. 2016. "Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations." Journal of Applied Physics 119(5), doi:10.1063/1.49407401195