Ashton, James P.Moxim, Stephen J.Lenahan, Patrick M.McKay, Colin G.Waskiewicz, Ryan J.Myers, Kenneth J.Flatte, Michael E.Harmon, Nicholas J.Young, Chadwin D.2020-04-112020-04-112018-12-060018-9499http://dx.doi.org/10.1109/TNS.2018.2885300https://hdl.handle.net/10735.1/7931Due to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechanisms of radiation damage in 3-D integrated circuits. In our study, we explore radiation damage in structures relevant to 3-D integrated circuits, but not on 3-D test structures themselves. Five structures of great technological importance to 3-D integrated circuits are investigated. We utilize both NZFMR and electrically detected magnetic resonance to investigate radiation effects in these structures. The structures involved in this paper are planar silicon metal-oxide-semiconductor field-effect transistors, silicon-germanium alloy-based transistors, fin-based transistors, silicon dioxide-based flowable oxides, and low-k dielectrics. Our study indicates that NZFMR has great potential in radiation damage studies, with exceptional promise in systems in which more conventional resonance is not possible.en©2018 IEEENuclear magnetic resonance spectroscopyMetal-oxide-semiconductor field-effect transistorsIntegrated circuits--TestingRadiation hardening (Electronics)Three-dimensional integrated circuitsarticleAshton, James P., Stephen J. Moxim, Patrick M. Lenahan, Colin G. McKay, et al. 2019. "A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy." IEEE Transactions on Nuclear Science 66(1): 428-436, doi: 10.1109/TNS.2018.2885300661