Kim, Si JoonMohan, JaidahYoung, Chadwin D.Colombo, LuigiKim, JiyoungSummerfelt, S. R.San, T.2019-07-252019-07-252018-059781538652473 (ISBN)https://hdl.handle.net/10735.1/6723Full text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article). All others may find the web address for this item in the full item record as "dc.relation.uri" metadata.In this study, we investigated the ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO) thin films with different thicknesses (5-20 nm) deposited by atomic layer deposition for the development of future ferroelectric random access memory cells. HZO-based capacitors with a thickness of 5 nm exhibited a switching polarization of ~13 μC/cm² and a ferroelectric saturation voltage of 1.0 V as extracted from the pulse write/read measurements. Furthermore, we performed fatigue measurements and we found no degradation up to 10¹⁰ switching cycles at 1.2 V.en©2018 IEEEAtomic layer depositionRandom access memory--FerroelectricFerroelectric thin filmsFerroelectricityHafnium compoundsThin filmsTinZirconium compoundsMaterials—FatiguearticleKim, S. J., J. Mohan, C. D. Young, L. Colombo, et al. 2018. "Ferroelectric TiN/Hf₀.₅Zr₀.₅O₂/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications." International Memory Workshop,10th, doi:10.1109/IMW.2018.8388832