Galatage, R. V.Zhernokletov, Dmitry M.Dong, HongBrennan, BarryHinkle, Christopher L.Wallace, Robert M.Vogel, E. M.2014-10-272014-10-272014-07-072014-07-071089-7550http://hdl.handle.net/10735.1/4144The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.en©2014 AIP Publishing LLCFrequency dispersionIndium gallium arsenideIndium(III) PhosphideSemiconductorsCapacitancearticleGalatage, R. V., D. M. Zhernokletov, H. Dong, B. Brennan, et al. 2014. "Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states." Journal of Applied Physics 116(1).1161