Qin, XiaoyeWallace, Robert M.2017-02-232017-02-2320150003-6951http://hdl.handle.net/10735.1/5269Includes supplementary informationA half cycle study of plasma enhanced atomic layer deposited (PEALD) Al₂O₃ on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H₂O precursor. The remote O₂ plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al₂O₃ growth on AlGaN/GaN devices. © 2015 AIP Publishing LLC.en©2015 AIP Publishing LLCAluminum alloysGallium nitrideX ray photoelectron spectroscopyModulation-doped field-effect transistorsAtomic layer depositionIons—ScatteringAluminum oxidearticleQin, X., and R. M. Wallace. 2015. "In situ plasma enhanced atomic layer deposition half cycle study of Al₂O₃ on AlGaN/GaN high electron mobility transistors." Applied Physics Letters 107(8), doi: 10.1063/1.49298181078