Chávez-Urbiola, Iker RodrigoWillars-Rodriguez, F. J.Ramirez Bon, R.Vorobiev, P.Vorobiev, Yu V.2020-04-272020-04-272018-10-110040-6090http://dx.doi.org/10.1016/j.tsf.2018.10.002https://hdl.handle.net/10735.1/8292Due to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).The heterostructure n-ZnO/p-Si was fabricated by Radio Frequency Sputtering. The photodiode characteristics were obtained from current-voltage curves. The photovoltaic effect and photodiode sensitivity were measured by transient photo-current, both under UV-Light and VIS-Light. The results show a well define rectification character, the relation between current at forward bias and reverse bias was about two orders of magnitude. The photovoltaic effect was observed for UV and Vis light; the photodiode presents a higher sensitivity for Vis light than for UV light. The transient-photocurrent was recorded at a different voltage (-2, -1 and 0 V) under Vis and UV light. The photo-response for UV and Vis light at -1 V were 1.71 mA/W and 9.35 mA/W and for 0 V were 0.62 mA/W and 0.70 mA/W respectively.en©2018 Elsevier B.V. All Rights Reserved.Zinc oxideSiliconPhotodiodesDetectorsThin filmsPulsed laser depositionHeterojunctionsTemperatureOptical detectorsMaterials sciencePhysicsarticleChávez-Urbiola, I. R., F. J. Willars-Rodriguez, R. Ramirez Bon, P. Vorobiev, et al. 2019. "Development and characterization of photodiode n-ZnO/p-Si by Radio Frecuency Sputtering, a sensor with low voltage operation and its response to visible and UV light." Thin Solid Films 669: 364-370, doi: 10.1016/j.tsf.2018.10.002669