Yu, W.Clerico, V.Hernandez Fuentevilla, C.Shi, XiaoyanJiang, Y.Saha, D.Lou, W. K.Chang, K.Huang, D. H.Gumbs, G.Smirnov, D.Stanton, C. J.Jiang, Z.Bellani, V.Meziani, Y.Diez, E.Pan, W.Hawkins, S. D.Klem, J. F.2019-05-312019-05-312018-05-311367-2630https://hdl.handle.net/10735.1/6537Includes supplementary materialWe report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (similar to 500 k Omega) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 Kand perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.enCC BY 3.0 (Attribution)©2018 The Authorshttp://creativecommons.org/licenses/by/3.0/Quantum-wellsSemiconductosElectron transportIndium arsenideGallium antimonidearticleYu, W., V. Clerico, C. Hernandez Fuentevilla, X. Shi, et al. 2018. "Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer." New Journal of Physics 20(5): art. 053062, doi:10.1088/1367-2630/aac595205