Anurag, A.Gohil, GhanshyamsinhAcharya, S.Han, K.Vechalapu, K.Baliga, B. J.Bhattacharya, S.Van brunt, E.Sabri, S.Hull, B.Grider, D.2019-10-112019-10-112018-06-059783035711455https://hdl.handle.net/10735.1/6995Full text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).Wide bandgap materials such as Silicon Carbide (SiC) has enabled the use of medium voltage unipolar devices like Metal-Oxide Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs), which can switch at much higher frequencies as compared to their silicon counterparts. It is therefore imperative to evaluate the performance of these medium voltage devices. In this paper, the static characterization and the switching performance of the new single die 3.3 kV, 45 A 4H-SiC MOSFET developed by Cree Inc are presented. The switching performance is measured through the conventional Double Pulse Test (DPT). Testing is done at a dc-link voltage of 1.5 kV for different values of current, and gate resistances. ©2018 Trans Tech Publications, Switzerland.en©2018 Trans Tech Publications, Switzerland.Metal oxide semiconductor field-effect transistorsSilicon carbidePower transistorsWide gap semiconductorsField-effect transistorsarticleAnurag, A., G. Gohil, S. Acharya, K. Han, et al. 2018. "Static and dynamic characterization of a 3.3 kV, 45 A 4H-SiC MOSFET." Materials Science Forum 924: 739-742, doi: 10.4028/www.scientific.net/MSF.924.739924