Dong, HongSantosh, KCAzcatl, AngelicaCabrera, WilfredoQin, XiaoyeBrennan, BarryZhernokletov, DmitryCho, KyeongjieWallace, Robert M.2014-07-112014-07-112013-11-252013-10-07Dong, H., KC Santosh, A. Azcatl, W. Cabrera, et al. 2013. "In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)." 114(20)0021-8979http://hdl.handle.net/10735.1/3649The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.en©2013 AIP Publishing LLCAnnealing of metalsOxidesIndium phosphidetext114203505