Bolshakov, PavelKhosravi, AvaZhao, PengWallace, Robert M.Young, Chadwin D.Hurley, P. K.2019-10-182019-10-182018-039781538650691https://hdl.handle.net/10735.1/7018Full text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage. © 2018 IEEE.en©2018 IEEEElectric fieldsHafnium compoundsSemiconductorsMicroelectronicsMolybdenum compoundsElectromotive forceField-effect transistorsarticleBolshakov, P., A. Khosravi, P. Zhao, R. M. Wallace, et al. 2018. "Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time." 2018 IEEE International Conference on Microelectronic Test Structures: 161-165, doi: 10.1109/ICMTS.2018.8383789