Gaddemane, GautamVandenberghe, William G.Van de Put, Maarten L.Chen, ShanmengTiwari, SabyasachiChen, E.Fischetti, Massimo V.2019-10-252019-10-252018-09-072469-9950https://hdl.handle.net/10735.1/7035Recent ab initio theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26000 to 35 cm²V⁻¹s⁻¹, for example, for the hole mobility in monolayer phosphorene) depending on the physical approximations used. Given this state of uncertainty, we review critically the physical models employed, considering phosphorene, a group-V material, as a specific example. We argue that the use of the most accurate models results in a calculated performance that is at the disappointing lower end of the predicted range. We also employ first-principles methods to study high-field transport characteristics in monolayer and bilayer phosphorene. For thin multilayer phosphorene we confirm the most disappointing results, with a strongly anisotropic carrier mobility that does not exceed ∼30 cm²V⁻¹s⁻¹ at 300 K for electrons along the armchair direction. We also discuss the dependence of low-field carrier mobility on the thickness of multilayer phosphorene. ©2018 American Physical Society.en©2018 American Physical Society. All Rights Reserved.Transport theoryPhosphoreneDensity functionalsarticleGaddemane, G., W. G. Vandenberghe, M. L. Van De Put, S. Chen, et al. 2018. "Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview." Physical Review B 98(11): art. 115416, doi: 10.1103/PhysRevB.98.11541698