Khosravi, AvaAddou, RafikCatalano, MassimoKim, JiyoungWallace, Robert M.2020-02-172020-02-172019-03-301996-1944http://dx.doi.org/10.3390/ma12071056https://hdl.handle.net/10735.1/7272Includes supplementary informationWe report an excellent growth behavior of a high-κ dielectric on ReS₂ , a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface of ReS₂ yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al₂O₃ thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al₂O₃ was achieved using a UV-Ozone pretreatment. The ReS₂ substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S-O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials. © 2019 by the authors.enCC BY 4.0 (Attribution)©2019 The Authorshttp://creativecommons.org/licenses/by/4.0/Atomic layer deposition (Plasma-enhanced)Rhenium sulfideX-ray photoelectron spectroscopyAluminum oxideAtomic force microscopyIndium compoundsMorphologyOzonePhotoelectronsPhotonsRhenium compoundsSulfur compoundsThin filmsTransition metalsarticleKhosravi, A., R. Addou, M. Catalano, J. Kim, et al. 2019. "High-κ dielectric on ReS 2 : In-situ thermal versus plasma-enhanced atomic layer deposition of Al 2 O 3." Materials 12(7), doi: 10.3390/ma12071056127